參數(shù)資料
型號: MXD1210ESA
廠商: MAXIM INTEGRATED PRODUCTS INC
元件分類: 微控制器/微處理器
英文描述: Nonvolatile RAM Controller
中文描述: SPECIALTY MICROPROCESSOR CIRCUIT, PDSO8
封裝: 0.150 INCH, MS-012AA, SOIC-8
文件頁數(shù): 1/8頁
文件大?。?/td> 87K
代理商: MXD1210ESA
For free samples & the latest literature: http://www.maxim-ic.com, or phone 1-800-998-8800
_______________General Desc ription
The MXD1210 nonvolatile RAM controller is a very low-
power CMOS circuit that converts standard (volatile)
CMOS RAM into nonvolatile memory. It also continually
monitors the power supply to provide RAM write protec-
tion when power to the RAM is in a marginal (out-of-
tolerance) condition. When the power supply begins to
fail, the RAM is write protected, and the device switch-
es to battery-backup mode.
Applic ations
μP Systems
Computers
Embedded Systems
____________________________Features
o
Battery Backup
o
Memory Write Protection
o
230μA Operating-Mode Quiescent Current
o
2nA Backup-Mode Quiescent Current
o
Battery Freshness Seal
o
Optional Redundant Battery
o
Low Forward-Voltage Drop on V
CC
Supply Switch
o
5% or 10% Power-Fail Detection Options
o
Tests Battery Condition During Power-Up
o
8-Pin SO Available
______________Ordering Information
*Contact factory for dice specifications.
M
Nonvolatile RAM Controller
________________________________________________________________ Maxim Integrated Products
1
V
CCI
FROM
DECODER
CE
1
2
7
6
3
4
5
8
V
CCO
VBATT1
VBATT2
GND
CE
V
CC
CMOS
RAM
MXD1210
+5V
__________Typic al Operating Circ uit
1
2
3
4
8
7
6
5
V
CCI
VBATT2
CEO
CE
GND
TOL
VBATT1
V
CCO
MXD1210
DIP/SO
16
15
14
13
12
11
10
9
1
2
3
4
5
6
7
8
N.C.
V
CCI
N.C.
VBATT2
VBATT1
N.C.
V
CCO
N.C.
MXD1210
N.C.
CEO
N.C.
CE
GND
N.C.
TOL
N.C.
Wide SO
TOP VIEW
19-0154; Rev 1; 3/96
PART
TEMP. RANGE
0°C to +70°C
0°C to +70°C
PIN-PACKAGE
8 Plastic DIP
8 SO
16 Wide SO
Dice*
8 Plastic DIP
MXD1210CPA
MXD1210CSA
MXD1210CWE
MXD1210C/D
MXD1210EPA
0°C to +70°C
0°C to +70°C
MXD1210ESA
MXD1210EWE
MXD1210MJ A
-40°C to +85°C
-40°C to +85°C
-55°C to +125°C
8 SO
16 Wide SO
8 CERDIP
-40°C to +85°C
_________________Pin Configurations
相關(guān)PDF資料
PDF描述
MXD1210MJA Nonvolatile RAM Controller
MXD1812 HALF BRIDGE MOSFET CONTROLLER
MXD1811 MOSFET Driver IC; Package/Case:28-SOIC; Fall Time, tf:70ns; High Side MOSFET Drive Type:On-Chip Charge Pump; Leaded Process Compatible:Yes; Load Capacitance:3300pF; Load Voltage Max:40V; MOSFET Driver Type:Quad Drivers, Full Bridge RoHS Compliant: Yes
MXD1811UR Low-Power UP Reset Circuits in 3-Pin
MXD1811XR Low-Power UP Reset Circuits in 3-Pin
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MXD1210ESA+ 功能描述:IC CNTRLR NVRAM 8-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM(SRAM) 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC(0.295",7.50mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件
MXD1210ESA+T 功能描述:IC CNTRLR NVRAM 8-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM(SRAM) 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC(0.295",7.50mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件
MXD1210ESA-T 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲(典型值):10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
MXD1210EWE 功能描述:監(jiān)控電路 RoHS:否 制造商:STMicroelectronics 監(jiān)測電壓數(shù): 監(jiān)測電壓: 欠電壓閾值: 過電壓閾值: 輸出類型:Active Low, Open Drain 人工復(fù)位:Resettable 監(jiān)視器:No Watchdog 電池備用開關(guān):No Backup 上電復(fù)位延遲(典型值):10 s 電源電壓-最大:5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:UDFN-6 封裝:Reel
MXD1210EWE+ 功能描述:IC CNTRLR NVRAM 16-SOIC RoHS:是 類別:集成電路 (IC) >> 存儲器 - 控制器 系列:- 標(biāo)準(zhǔn)包裝:45 系列:- 控制器類型:靜態(tài) RAM(SRAM) 電源電壓:4.5 V ~ 5.5 V 工作溫度:0°C ~ 70°C 封裝/外殼:16-SOIC(0.295",7.50mm 寬) 供應(yīng)商設(shè)備封裝:16-SOIC W 包裝:管件