- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄96111 > MWT-A9 (MICROWAVE TECHNOLOGY INC) KU BAND, GaAs, RF POWER, MESFET PDF資料下載
參數(shù)資料
| 型號： | MWT-A9 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | KU BAND, GaAs, RF POWER, MESFET |
| 封裝： | DIE-4 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 103K |
| 代理商： | MWT-A9 |
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
MwT-A9
18 GHz High Gain, Low Noise
GaAs FET
75
°°°°°C or Lower
100
125
75
°°°°°C or Lower
100
125
150
0
2
4
6
8
400
325
250
175
100
0
Vds (V)
Ids
(mA)
Absolute Maximum Continuous Maximum
SAFE OPERATING LIMITS vs. BACKSIDE CHIP
MAXIMUM RATINGS AT Ta = 25
°°°°°C
SYMBOL
VDS
Tch
Tst
Pin
PARAMETER
UNITS
CONT MAX1
ABSOLUTE MAX2
Drain to Source Voltage
Channel Temperature
Storage Temperature
RF Input Power
See Safe Operating Limits
°°°°°C
240
+175
360
V
mW
-65 to +150
+150
NOTES: 1. Exceeding any one of these limits in continuous operation may reduce the
mean-time-to-failure below the design goals.
2. Exceeding any one of these limits may cause permanent damage.
MwT-9 And A9
DUAL BIAS
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
18 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 Mils
(2 each)
FP9
MwT-9 And A9
OPTIONAL BONDING
50
Output
Microstrip
50
Input
Microstrip
Output Reference
Plane
Input Reference
Plane
7 Mils Long
18 Mils Long
2 Mils
MwT
2 Mils
All Bond
Wires are 1.0
Mil Diameter
20 Mils
Copper Heat Sink
5 Mils Below Level of
Microstrip
Gold Ridge
10x 10x 5 For
Dual Bias, or
25pF Caps for
Single Bias
(2 each)
FP9
FREQUENCY
GHz
NF MIN
dB
GAMMA OPT
MAG ANGLE
Rn/50
1.00
2.00
4.00
6.00
10.00
12.00
16.00
18.00
0.30
0.33
0.62
0.93
1.48
1.73
2.19
2.40
0.85
0.69
0.56
0.52
0.57
0.61
0.68
0.71
4.5
36.8
73.4
106.3
152.0
167.3
-169.8
-160.8
0.19
0.18
0.19
0.17
0.16
0.15
TYPICAL NOISE PARAMETERS
MwT-A9LN Chip: VDS= 3.0V IDS= 35mA
NOISE FIGURE AND
ASSOCIATED GAIN VS. FREQUENCY
2.0
MwT-A9
18 GHz High Gain, Low Noise
GaAs FET
MAXIMUM RATINGS AT Ta = 25
°°°°°C
1.5
1.0
0.5
12
4
6
8
12
20
20.0
15.0
10.0
5.0
0.0
Associated
Gain
(dB)
NFopt
(dB)
IDSS
(mA)
BIN#
1
2
3
78-
90
90-
102
102-
114
45
6
114-
126
126-
138
138-
150
78
9
150-
162
162-
174
174-
186
10
11
12
186-
198
198-
210
210-
222
13
14
15
222-
234
234-
246
246-
258
16
17
18
258-
270
270-
282
282-
294
When placing order or inquiring, please specify BIN range, wafer no., if known, and screening level required.
BIN SELECTION
Frequency (GHz)
3
BIN ACCURACY STATEMENT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MWT-H15 | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MWT-H16-14 | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MWT-H16-13 | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MWT-H16-3 | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
| MWT-H16-5 | KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MWT-A973 | 制造商:MICROWAVE TECHNOLOGY INC 功能描述:MESFET GAAS 18GHZ PKG 73 |
| MWTM 25/8]300/S | 制造商:Tyco Electronics 功能描述:Bulk |
| MWTM-10/3-1200-S(B25) | 制造商:TE Connectivity 功能描述:MWTM-10/3-1200-S(B25), |
| MWTM-16/5-A/U(B100) | 制造商:TE Connectivity 功能描述: |
| MWTZ100-10-C | 制造商:ITW Pancon 功能描述:MWTZ100-10-C / MAS-CON DOUBLE Z SPLICE - 100 SERIES |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。