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參數(shù)資料
| 型號： | MWT-A9 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | KU BAND, GaAs, RF POWER, MESFET |
| 封裝： | DIE-4 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 103K |
| 代理商： | MWT-A9 |
IDEAL FOR HIGH DYNAMIC RANGE RECEIVER APPLICATIONS
1.6 dB NOISE FIGURE AT 12 GHz
+24.5 dBm OUTPUT POWER AT 12 GHz
9 dB SMALL SIGNAL GAIN AT 12 GHz
0.3 MICRON REFRACTORY METAL/GOLD GATE
750 MICRON GATE WIDTH
AVAILABLE IN CHIP AND PACKAGES
SYMBOL
PARAMETERS AND CONDITIONS
FREQ
UNITS
MIN
TYP
P1dB
SSG
NFopt
GA
Output Power at 1 dB Compression
VDS= 5.0 V Idss= 0.6 IDS=120mA
Small Signal Gain
VDS= 5.0 V Idss= 0.6 IDS=120mA
Optimum Noise Figure
VDS= 3.0V IDS= 30mA
Gain at Optimum Noise Figure
VDS= 3.0V IDS= 30mA
12 GHz
dBm
dB
23.0
8.5
24.5
9.0
1.8
6.5
RF SPECIFICATIONS AT Ta = 25
°°°°°C
MwT-A9
18 GHz High Gain, Low Noise
GaAs FET
12 GHz
DESCRIPTION
The MwT-A9 is a GaAs MESFET device whose nominal quarter-micron gate length and 750 micron gate width make it ideally suited to
applications requiring high-gain in the 500 MHz to 18 GHz frequency range with moderate power output while exhibiting low noise figure.
The chip is produced using MwT’s reliable metal system and devices from each wafer are screened to insure reliability. All chips are
passivated using MwT’s patented “Diamond-Like Carbon” process for increased durability, Designers can use MwT’s unique BIN selection
feature to choose devices from narrow Idss ranges, insuring consistent circuit operation.
97
67
97
75
419
98
75
292
CHIP THICKNESS = 125
DC SPECIFICATIONS AT Ta = 25
°°°°°C
SYMBOL
PARAM. & CONDITIONS
UNITS
MIN
TYP
MAX
IDSS
Gm
Vp
BVGSO
BVGDO
Saturated Drain Current
Vds= 4.0 V VGS= 0.0 V
Transconductance
Vds= 2.0 V VGS= 0.0 V
Pinch-off Voltage
Vds= 3.0 V IDS= 5.0 mA
Gate-to-Source Breakdown Volt.
Igs= -1.0 mA
Gate-to-Drain Breakdown Volt.
Igd= -1.0 mA
mA
78
-2.0
282
mS
95
120
-5.0
V
°°°°°C/W
-5.0
-6.0
-10.0
70
175*
Lg
Rg
Rd
Ld
Cgd
GATE
DRAIN
Cgs
Cpg
Rds
Cds
Cpd
Ri
Rs
Ls
gm
tau
SOURCE
DEVICE EQUIVALENT CIRCUIT MODEL
Gate Bond Wire Inductance
Gate Pad Capacitance
Gate Resistance
Gate-Source Capacitance
Channel Resistance
Gate-Drain Capacitance
Transconductance
Transit Time
Lg
Cpg
Rg
Cgs
Ri
Cgd
gm
tau
0.10
nH
0.03
pF
0.50
0.78
pF
0.8
0.10
pF
120.0
mS
1.0
psec
Source Resistance
Source Inductance
Drain-Source Resistance
Drain-Source Capacitance
Drain Resistance
Drain Pad Capacitance
Drain Inductance
VALUE
PARAMETER
Rs
Ls
Rds
Cds
Rd
Cpd
Ld
0.80
0.04
nH
100.0
0.08
pF
1.0
0.10
pF
0.28
nH
Rth
Thermal
Resistance
6.0
MwT-A9
18 GHz High Gain, Low Noise
GaAs FET
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
4268 Solar Way
Fremont
California 94538 Phone: (510) 651-6700 Fax: (510) 651-2208
All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.
DC SPECIFICATIONS AT Ta = 25
°°°°°C
RF SPECIFICATIONS AT Ta = 25
°°°°°C
FEATURES
NOTE:
For Package information, please see supplimentary application note from our website at
www.mwtinc.com. When placing order or inquiring, please specify BIN range, wafer no., if
known, and screening level required.
ORDERING INFORMATION
Chip
MwT-A9
Package 70
MwT-970
Package 71
MwT-971
Package 73
MwT-973
All Dimensions in Microns
MwT-A9 Chip, A971
MwT-A970, A973
*Overall Rth depends on case mounting.
DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM
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相關代理商/技術參數(shù) |
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| MWT-A973 | 制造商:MICROWAVE TECHNOLOGY INC 功能描述:MESFET GAAS 18GHZ PKG 73 |
| MWTM 25/8]300/S | 制造商:Tyco Electronics 功能描述:Bulk |
| MWTM-10/3-1200-S(B25) | 制造商:TE Connectivity 功能描述:MWTM-10/3-1200-S(B25), |
| MWTM-16/5-A/U(B100) | 制造商:TE Connectivity 功能描述: |
| MWTZ100-10-C | 制造商:ITW Pancon 功能描述:MWTZ100-10-C / MAS-CON DOUBLE Z SPLICE - 100 SERIES |
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