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參數(shù)資料
| 型號： | MWT-A989 |
| 廠商： | MICROWAVE TECHNOLOGY INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | S BAND, GaAs, N-CHANNEL, RF POWER, MESFET |
| 封裝： | ROHS COMPLIANT, SURFACE MOUNT, 4 PIN |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 218K |
| 代理商： | MWT-A989 |
MwT-A989
DC-4 GHz Packaged FET
June 2006
MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538
510-651-6700
FAX
510-651-2208 WEB www.mwtinc.com
Data contained herein is subject to change without notice. All rights reserved 2006
Please visit MwT website www.mwtinc.com for information on other MwT products packaged in the SOT-89 package.
Features:
Ideal for DC – 4.0 GHz High Linearity / High Dynamic Range Applications
Excellent RF Performance:
o
40 dBm IP3
o
65 dBc ACPR
o
25 dBm P1dB
o
17 dB SSG @ 2000MHz
o
0.9 dB NF @ 2000MHz
MTTF>100 years @ ambient temperature 85 °C
Lead Free RoHS Compliant Surface-Mount SOT-89 Package
Description:
The MwT-A989 is a high linearity GaAs MESFET device in low cost SOT89 package that is ideally suited for high dynamic range LNA
applications. The applications include 2G, 2.5G, and 3G wireless infrastructure standards, such as GSM, TDMA, cdma, Edge,
cdma2000, WCDMA, TD-SCDMA, and UMTS base stations. This product is also ideal for high data rate wireless LAN infrastructure
applications, such as high QAM rate 802.11 WiFi and 802.16 WiMax base stations and APs (Access Points). In additional, the
product can be used for point-to-point microwave communications links. The third order intercept performance of the MwT-A989 is
excellent, typically 14 dB above the 1 dB power gain compression point. The NF is as low as 0.6 dB at 900 MHz. The chip is produced
using MwT's proprietary high linearity device design and process with reliable metal system. All chips are passivated using MwT's
patented "Diamond-Like Carbon" process for increased durability.
Electrical Specifications(1)
: @ Vds=6.0V, Ids=100mA, Ta=25 °C
SYMBOL
PARAMETERS & CONDITIONS
FREQ
UNIT
TYP
SSG
Small Signal Gain
2GHz
dB
17
P1dB
Output Power @ 1 dB Compression
2GHz
dBm
25
PAE
Power Added Efficiency
2GHz
%
40
IP3
Third Order Intercept Point
2GHz
dBm
40
Noise Figure
Noise Figure (2)
2GHz
dB
0.9
(1) with tuners at input and output
(2) Vds=4.0 V @ Ids=50mA
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