參數(shù)資料
型號: MWI75-12E8
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: IGBT Modules
中文描述: 130 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-19
文件頁數(shù): 3/4頁
文件大?。?/td> 145K
代理商: MWI75-12E8
2004 IXYS All rights reserved
3 - 2
MWI 75-12 A8
4
IXYS reserves the right to change limits, test conditions and dimensions.
Fig. 1
Typ. output characteristics
Fig. 2
Typ. output characteristics
Fig. 3
Typ. transfer characteristics
Fig. 4
Typ. forward characteristics
of free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. turn off characteristics
of free wheeling diode
0
200
400
600
800
A/
μ
s
1000
0
80
160
240
320
0
100
200
0
1
2
3
4
5
0
50
100
150
200
250
0
100
200
300
Q
G
400
0
5
10
15
20
0
1
2
3
4
5
0
50
100
150
200
250
V
CE
V
I
C
V
CE
A
I
C
V
nC
-di/dt
V
V
GE
I
RM
t
rr
MWI75-12A8
I
RM
t
rr
A
9 V
11 V
A
4
5
6
7
8
9
10
0
20
40
60
80
100
V
V
GE
A
I
C
0
1
2
3
0
50
100
150
200
250
A
V
V
F
I
F
ns
V
GE
= 17 V
15 V
T
VJ
= 25°C
9 V
11 V
13 V
V
GE
= 17 V
T
VJ
= 125°C
T
VJ
= 25°C
V
CE
= 20 V
T
VJ
= 125°C
T
VJ
= 25°C
13 V
15 V
V
CE
= 600 V
I
C
= 100 A
T
VJ
= 125°C
V
R
= 600 V
I
F
= 100 A
T
VJ
= 125°C
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