參數(shù)資料
型號: MWI75-12A5
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: IGBT Modules Sixpack
中文描述: 90 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-17
文件頁數(shù): 2/4頁
文件大?。?/td> 145K
代理商: MWI75-12A5
2004 IXYS All rights reserved
2 - 2
MWI 75-12 A8
4
IXYS reserves the right to change limits, test conditions and dimensions.
Module
Symbol
Conditions
Maximum Ratings
T
VJ
T
JM
T
stg
operating
-40...+125
+150
-40...+125
°
C
°
C
°
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
3 - 6
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
1.8
m
d
S
d
A
Creepage distance on surface
Strike distance in air
10
10
mm
mm
R
thCH
with heatsink compound
0.01
K/W
Weight
300
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25°C
T
C
= 80°C
150
100
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 75 A; V
GE
= 0 V; T
VJ
= 25°C
2.2
1.6
2.6
V
V
T
VJ
= 125°C
I
RM
t
rr
I
F
= 75 A; di
/dt = -750 A/μs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
79
220
A
ns
R
thJC
(per diode)
0.41 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125°C)
V
0
= 1.5 V; R
0
= 13.5 m
Free Wheeling Diode (typ. at T
J
= 125°C)
V
0
= 1.3 V; R
0
= 4 m
Thermal Response
IGBT (typ.)
C
th1
= 0.295 J/K; R
th1
= 0.186 K/W
C
th2
= 1.750 J/K; R
th2
= 0.064 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.227 J/K; R
th1
= 0.321 K/W
C
th2
= 1.328 J/K; R
th2
= 0.089 K/W
Dimensions in mm (1 mm = 0.0394")
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