參數(shù)資料
型號: MWI100-12E8
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: IGBT Modules
中文描述: 165 A, 1200 V, N-CHANNEL IGBT
封裝: SIXPACK-19
文件頁數(shù): 2/2頁
文件大?。?/td> 71K
代理商: MWI100-12E8
2001 IXYS All rights reserved
2 - 2
B3
MWI 100-12 E8
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25°C
T
C
= 80°C
200
130
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 100 A; V
GE
= 0 V; T
VJ
= 25°C
2.2
1.6
2.5
V
V
T
VJ
= 125°C
I
RM
t
rr
I
F
= 120 A; di
F
/dt = -750 A/μs; T
VJ
= 125°C
V
R
= 600 V; V
GE
= 0 V
82
200
A
ns
R
thJC
(per diode)
0.3 K/W
Module
Symbol
Conditions
Maximum Ratings
T
VJ
T
stg
-40...+150
-40...+125
°
C
°
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
M
d
Mounting torque (M5)
3 - 6
Nm
Symbol
Conditions
Characteristic Values
min.
typ.
max.
R
pin-chip
1.8
m
d
S
d
A
Creepage distance on surface
Strike distance in air
10
10
mm
mm
R
thCH
with heatsink compound
0.01
K/W
Weight
300
g
Dimensions in mm (1 mm = 0.0394")
Higher magnification on page B3 - 72
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