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參數(shù)資料
| 型號(hào)： | MW5IC970NBR1 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | RF LDMOS Wideband 2-Stage Power Amplifiers |
| 中文描述： | 寬帶射頻LDMOS雙級(jí)功率放大器 |
| 文件頁數(shù)： | 7/8頁 |
| 文件大小： | 219K |
| 代理商： | MW5IC970NBR1 |
MW5IC970NBR1
7
RF Device Data
Freescale Semiconductor
PACKAGE DIMENSIONS
TO-272 WB-16
PLASTIC
.224 BSC
.150 BSC
CASE 1329-09
ISSUE L
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES PER
ASME Y14.5M1994.
3. DATUM PLANE H IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE THE
LEAD EXITS THE PLASTIC BODY AT THE TOP OF
THE PARTING LINE.
4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 (0.15) PER SIDE. DIMENSIONS "D" AND "E1"
DO INCLUDE MOLD MISMATCH AND ARE
DETERMINED AT DATUM PLANE H.
5. DIMENSIONS "b", "b1", "b2" AND "b3" DO NOT
INCLUDE DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE .005 (0.13)
TOTAL IN EXCESS OF THE "b", "b1", "b2" AND "b3"
DIMENSIONS AT MAXIMUM MATERIAL CONDITION.
6. HATCHING REPRESENTS THE EXPOSED AREA OF
THE HEAT SLUG.
7. DIM A2 APPLIES WITHIN ZONE "J" ONLY.
C
H
A
SEATING
PLANE
DATUM
PLANE
Y
Y
DIM
A
A1
MIN
.100
.038
.040
MAX
.104
.044
.042
MIN
2.54
0.96
1.02
MAX
2.64
1.12
1.07
MILLIMETERS
INCHES
M
N
b
b1
b2
b3
.600
.270
.011
.037
.037
.225
.017
.043
.043
.231
15.24
6.86
0.28
0.94
0.94
5.72
0.43
1.09
1.09
5.87
D
D1
E
E1
E2
.928
.810 BSC
.932
23.57
20.57 BSC
23.67
.551
.353
.346
.559
.357
.350
14.00
8.97
8.79
14.20
9.07
8.89
c1
e
e1
e2
e3
.007
.054 BSC
.040 BSC
.011
.18
1.37 BSC
1.02 BSC
5.69 BSC
3.81 BSC
.28
r1
aaa
.063
.068
1.6
1.73
.004
.10
c1
B
b3
A
E1
r1
e
D
4X
b1
C A
D1
E
10X
b
INDEX
e1
4X
e2
b2
M
aaa
C A
M
aaa
M
aaa
C A
M
aaa
C A
M
aaa
C A
M
N
VIEW Y-Y
e3
A1
NOTE 6
2X
B
ZONE "J"
A2
7
F
.025 BSC
0.64 BSC
F
A2
E2
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| MW5IC970NBR1_10 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband 2-Stage Power Amplifiers |
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