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MW5IC970NBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband 2-Stage
Power Amplifiers
Designed for broadband commercial and industrial applications with frequen-
cies from 132 MHz to 960 MHz. The high gain and broadband performance of
this device make it ideal for large-signal, common-source amplifier applica-
tions in 28 volt base station equipment. The device has a 2-stage design with
off-chip matching for the input, interstage and output networks to cover the
desired frequency band.
Typical Performance: 800 MHz, 28 Volts, I
DQ1
= 80 mA,
I
DQ2
= 650 mA, P
out
= 70 Watts PEP
Power Gain — 30 dB
Drain Efficiency — 48%
Capable of Handling 10:1 VSWR, @ 28 Vdc, 960 MHz, 70 Watts CW
Output Power
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
200
°
C Capable Plastic Package
RoHS Compliant
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
V
D1
/RF
out1
V
D1
/RF
out1
RF
in1
V
RD2
V
D2
/RF
out2
Quiescent Current
Temperature Compensation
V
RG2
/V
GS2
V
RG1
/V
GS1
V
RD1
(Top View)
GND
V
RD2
GND
RF
in1
V
D1
/RF
out1
V
D1
/RF
out1
RF
in2
GND
NC
V
D2/
RF
out2
GND
GND
V
RG2
/V
GS2
V
RG1
/V
GS1
V
RD1
NC
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
1
Note: Exposed backside flag is source
terminal for transistors.
RF
in2
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Document Number: MW5IC970NBR1
Rev. 0, 4/2006
Freescale Semiconductor
Technical Data
800-900 MHz, 70 W, 28 V
RF LDMOS WIDEBAND
2-STAGE POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW5IC970NBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.