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參數(shù)資料
| 型號(hào)： | MW4IC915 |
| 英文描述： | MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers |
| 中文描述： | MW4IC915MBR1。 MW4IC915GMBR1的GSM / GSM的EDGE網(wǎng)絡(luò)。 ? - CDMA技術(shù)。的W - CDMA。 860-960兆赫。 15日布什26最小輸出LDMOS的寬帶集成功率放大器 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 781K |
| 代理商： | MW4IC915 |
1
MW4IC001MR4
Motorola, Inc. 2004
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifier
The MW4IC001MR4 wideband integrated circuit is designed for use as a
distortion signature device in analog predistortion systems. It uses Motorola’s
newest High Voltage (26 to 28 Volts) LDMOS IC technology. Its wideband On
Chip design makes it usable from 800 MHz to 2200 MHz. The linearity
performances cover all modulations for cellular applications: GSM EDGE,
TDMA, CDMA and W-CDMA.
Typical CW Performance at 2170 MHz, 28 Volts, I
DQ
= 12 mA
Output Power — 900 mW PEP
Power Gain — 13 dB
Efficiency — 38%
High Gain, High Efficiency and High Linearity
Designed for Maximum Gain and Insertion Phase Flatness
Excellent Thermal Stability
Characterized with Series Equivalent Large-Signal Impedance Parameters
In Tape and Reel. R4 Suffix = 100 Units per 12 mm, 7 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
- 0.5, +15
Vdc
Total Device Dissipation @ T
C
= 25
°
C
Derate above 25
°
C
P
D
4.58
0.037
W
W/
°
C
Storage Temperature Range
T
stg
- 65 to +150
°
C
Operating Junction Temperature
T
J
150
°
C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1)
Unit
Thermal Resistance, Junction to Case @ 85
°
C
R
θ
JC
27.3
°
C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
0 (Minimum)
Machine Model
M1 (Minimum)
Charge Device Model
C2 (Minimum)
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Order this document
by MW4IC001MR4/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
800-2170 MHz, 900 mW, 28 V
W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIER
CASE 466-03, STYLE 1
PLD-1.5
PLASTIC
MW4IC001MR4
REV 2
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MW4IC915GMBR1 | 功能描述:IC PWR AMP RF 26V 15W TO272-16GW RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW4IC915GNBR1 | 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| MW4IC915GNBR1_06 | 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:RF LDMOS Wideband Integrated Power Amplifiers |
| MW4IC915MBR1 | 功能描述:IC PWR AMP RF 26V 15W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR) |
| MW4IC915NBR1 | 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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