參數(shù)資料
型號(hào)： MW4IC2230GNBR1
廠商： 飛思卡爾半導(dǎo)體(中國(guó))有限公司
英文描述： RF LDMOS Wideband Integrated Power Amplifiers
中文描述： 射頻LDMOS寬帶集成功率放大器
文件頁(yè)數(shù)： 1/16頁(yè)
文件大小： 711K
代理商： MW4IC2230GNBR1
MW4IC2230NBR1 MW4IC2230GNBR1
1
RF Device Data
Freescale Semiconductor
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230N wideband integrated circuit is designed for W-CDMA
base station applications. It uses Freescale’s newest High Voltage (26 to 28
Volts) LDMOS IC technology and integrates a multi-stage structure. Its
wideband on-chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W-CDMA.
Final Application
Typical Single-Carrier W-CDMA Performance:
V
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = -45 dBc in 3.84 MHz Bandwidth
Driver Application
Typical Single-Carrier W-CDMA Performance:
V
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = -53.5 dBc in 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 10 mW to 5 W CW
P
out
.
Features
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Quiescent Current Temperature Compensation
with Enable/Disable Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application
(1)
Integrated ESD Protection
200
°
C Capable Plastic Package
N Suffix Indicates Lead-Free Terminations. RoHS Compliant.
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
(Top View)
GND
V
DS2
V
RD1
V
RG1
V
DS1
RF
in
V
GS1
V
GS2
V
GS3
GND
GND
V
DS3/
RF
out
GND
Quiescent Current
Temperature Compensation
3 Stages I
C
V
GS1
V
GS2
V
GS3
RF
in
V
DS2
V
DS1
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
V
DS3
/RF
out
1
Note: Exposed backside flag is source
terminal for transistors.
V
RD1
V
RG1
1. Refer to AN1987,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
Document Number: MW4IC2230N
Rev. 6, 5/2006
Freescale Semiconductor
Technical Data
2110-2170 MHz, 30 W, 28 V
SINGLE W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW4IC2230NBR1
MW4IC2230NBR1
MW4IC2230GNBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW4IC2230GNBR1
Freescale Semiconductor, Inc., 2006. All rights reserved.
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MW4IC2230MBR5 功能描述:IC PWR AMP RF 28V 30W TO-272-16 RoHS:否 類(lèi)別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR)
MW4IC2230NBR1 功能描述:射頻放大器 2.1GHZ 28V TO272WBN RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MW4IC915 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers
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