參數(shù)資料
型號(hào)： MW4IC2230MBR1
廠商： MOTOROLA INC
元件分類： 衰減器
英文描述： LEAD FREE A3938SLDTR
中文描述： 2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
封裝： PLASTIC, CASE 1329-09, TO-272, 16 PIN
文件頁(yè)數(shù)： 1/12頁(yè)
文件大?。?/td> 660K
代理商： MW4IC2230MBR1
1
MW4IC2230MBR1 MW4IC2230GMBR1
Motorola, Inc. 2004
The Wideband IC Line
RF LDMOS Wideband Integrated
Power Amplifiers
The MW4IC2230 wideband integrated circuit is designed for W-CDMA base
station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts)
LDMOS IC technology and integrates a multi-stage structure. Its wideband
On-Chip design makes it usable from 1600 to 2400 MHz. The linearity
performances cover all modulations for cellular applications: GSM, GSM
EDGE, TDMA, CDMA and W-CDMA.
Final Application
Typical Single-carrier W-CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 5 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on
CCDF.
Power Gain — 31 dB
Drain Efficiency — 15%
ACPR @ 5 MHz = -45 dBc @ 3.84 MHz Bandwidth
Driver Application
Typical Single-carrier W-CDMA Performance:
V
DD
= 28 Volts, I
DQ1
=
60 mA, I
DQ2
= 350 mA, P
out
= 0.4 Watts Avg., f = 2140 MHz, Channel
Bandwidth = 3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 31.5 dB
ACPR @ 5 MHz = -53.5 dBc @ 3.84 MHz Bandwidth
Capable of Handling 3:1 VSWR, @ 28 Vdc, 2170 MHz, 5 Watts CW
Output Power
Characterized with Series Equivalent Large-Signal Impedance Parameters
On-Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output)
Integrated Temperature Compensation with Enable/Disable Function
On-Chip Current Mirror g
m
Reference FET for Self Biasing Application (1)
Integrated ESD Protection
Also Available in Gull Wing for Surface Mount
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
Functional Block Diagram
PIN CONNECTIONS
(Top View)
GND
V
DS2
V
RD1
V
RG1
V
DS1
RF
in
V
GS1
V
GS2
V
GS3
GND
GND
V
DS3/
RF
out
GND
Quiescent Current
Temperature Compensation
3 Stages I
C
V
GS1
V
GS2
V
GS3
RF
in
V
DS2
V
DS1
2
3
4
5
6
7
8
9
10
11
16
15
14
13
12
V
DS3
/RF
out
1
NOTE: Exposed backside flag is source
terminal for transistors.
V
RD1
V
RG1
(1) Refer to AN1987/D,
Quiescent Current Control for the RF Integrated Circuit Device Family.
Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1987.
Order this document
by MW4IC2230/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2110-2170 MHz, 30 W, 28 V
SINGLE W-CDMA
RF LDMOS WIDEBAND
INTEGRATED POWER AMPLIFIERS
CASE 1329-09
TO-272 WB-16
PLASTIC
MW4IC2230MBR1
MW4IC2230MBR1
MW4IC2230GMBR1
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MW4IC2230GMBR1
REV 2
F
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
.
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MW4IC2230MBR5 功能描述:IC PWR AMP RF 28V 30W TO-272-16 RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR)
MW4IC2230NBR1 功能描述:射頻放大器 2.1GHZ 28V TO272WBN RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
MW4IC915 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-CDMA. W-CDMA. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power Amplifiers
MW4IC915GMBR1 功能描述:IC PWR AMP RF 26V 15W TO272-16GW RoHS:否 類別:RF/IF 和 RFID >> RF 放大器 系列:- 標(biāo)準(zhǔn)包裝:3,000 系列:- 頻率:100MHz ~ 6GHz P1dB:9.14dBm（8.2mW） 增益:15.7dB 噪音數(shù)據(jù):1.3dB RF 型:CDMA，TDMA，PCS 電源電壓:2.7 V ~ 5 V 電流 - 電源:60mA 測(cè)試頻率:2GHz 封裝/外殼:0505（1412 公制） 包裝:帶卷 (TR)
MW4IC915GNBR1 功能描述:射頻放大器 15W 900MHZ 26V RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel
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