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參數(shù)資料
| 型號(hào)： | MV2101 |
| 廠商： | 樂山無線電股份有限公司 |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Silicon Tuning Diode |
| 中文描述： | 硅調(diào)諧二極管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 70K |
| 代理商： | MV2101 |
MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2205, LV2209
http://onsemi.com
2
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min
Nom
Max
Typ
Min
Typ
Max
MMBV2101LT1/MV2101
MMBV2103LT1
LV2205/MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1
LV2209MMBV2109LT1/MV2109
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1,
are also available in bulk. Use the device title and
drop the ”T1” suffix when ordering any of these devices in bulk.
6.1
9.0
13.5
19.8
24.3
29.7
6.8
10
15
22
27
33
7.5
11
16.5
24.2
29.7
36.3
450
400
400
350
300
200
2.5
2.5
2.5
2.5
2.5
2.5
2.7
2.9
2.9
2.9
3.0
3.0
3.2
3.2
3.2
3.2
3.2
3.2
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a
capacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
admittance bridge at the specified frequency and
substituting in the following equations:
2 fC
G
(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length
1/16”.
Q
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc, f = 1.0
MHz, TA = –65
°
C with CT at VR = 4.0 Vdc, f = 1.0 MHz, TA
= +85
°
C in the following equation, which defines TCC:
85
°
C) – CT(–65
°
C)
85
65
TCC
CT(
·
106
CT(25
°
C)
Accuracy limited by measurement of CT to
±
0.1 pF.
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