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參數(shù)資料
| 型號： | MV209RLRA |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 變容二極管 |
| 英文描述： | VHF BAND, 29 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-92 |
| 封裝： | CASE 182-06, TO-226AC, 2 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 119K |
| 代理商： | MV209RLRA |
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;
providing solid–state reliability in replacement of mechanical tuning
methods.
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
MAXIMUM RATINGS
Rating
Symbol
MMBV109LT1
MV209
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power
Dissipation
@ TA = 25°C
Derate above 25
°C
PD
200
2.0
200
1.6
mW
mW/
°C
Junction Temperature
TJ
+125
°C
Storage Temperature
Range
Tstg
–55 to +150
°C
DEVICE MARKING
MMBV109LT1 = M4A, MV209 = MV209
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise
noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Adc)
V(BR)R
30
—
Vdc
Reverse Voltage Leakage
Current (VR = 25 Vdc)
IR
—
0.1
Adc
Diode Capacitance
Temperature Coefficient
(VR = 3.0 Vdc, f = 1.0
MHz)
TCC
—
300
—
ppm/
°
C
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz (Note 1)
Device
Min
Nom
Max
Min
Max
MMBV109LT1, MV209
26
29
32
200
5.0
6.5
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
October, 2001 – Rev. 3
683
Publication Order Number:
MMBV109LT1/D
MMBV109LT1,
MV209
26–32 pF
VOLTAGE VARIABLE
CAPACITANCE DIODES
MMBV109LT1 and MV209 are Preferred Devices
1
2
3
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
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