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參數(shù)資料
| 型號(hào)： | MMBV2105L |
| 廠商： | MOTOROLA INC |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | HF-UHF BAND, 15 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 130K |
| 代理商： | MMBV2105L |
1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Silicon Tuning Diodes
These devices are designed in the popular PLASTIC PACKAGE for high volume
requirements of FM Radio and TV tuning and AFC, general frequency control and
tuning applications.They provide solid–state reliability in replacement of mechanical
tuning methods. Also available in Surface Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
MAXIMUM RATINGS
Rating
Symbol
MV21xx
MMBV21xxLT1
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation
@ TA = 25°C
Derate above 25
°C
PD
280
2.8
225
1.8
mW
mW/
°C
Junction Temperature
TJ
+150
°C
Storage Temperature Range
Tstg
–55 to +150
°C
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2107LT1 = 4W
MMBV2103LT1 = 4H
MMBV2108LT1 = 4X
MMBV2105LT1 = 4U
MMBV2109LT1 = 4J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10 Adc)
V(BR)R
30
—
Vdc
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
IR
—
0.1
Adc
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
TCC
—
280
—
ppm/
°C
Thermal Clad is a trademark of the Bergquist Company
Order this document
by MMBV2101LT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2105 MV2108
MV2109 MV2111
MV2115
6.8–100 pF
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
1
2
3
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
Motorola, Inc. 1997
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
REV 1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MMBV2103L | HF-UHF BAND, 10 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB |
| MV2115RL | HF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
| MV2101RL1 | HF-UHF BAND, 6.8 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
| MV2115RL1 | HF-UHF BAND, 100 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
| MV2109RLRA | HF-UHF BAND, 33 pF, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMBV2105LT1 | 功能描述:變?nèi)荻O管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV2105LT1G | 功能描述:變?nèi)荻O管 30V 13.5pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV2107L | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Silicon Tuning Diodes |
| MMBV2107LT1 | 功能描述:變?nèi)荻O管 30V 20pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
| MMBV2107LT1G | 功能描述:變?nèi)荻O管 30V 20pF RoHS:否 制造商:Skyworks Solutions, Inc. 電容:5.2 pF 反向電壓:10 V 正向連續(xù)電流:20 mA 端接類型:SMD/SMT 封裝 / 箱體:SC-79 封裝:Reel |
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