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參數(shù)資料
| 型號(hào)： | MURS160/5 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | PLASTIC, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 21K |
| 代理商： | MURS160/5 |
MURS140 and MURS160
Vishay Semiconductors
formerly General Semiconductor
Document Number 88688
www.vishay.com
30-Jul-02
1
New Product
Ultrafast Plastic Rectifier
Reverse Voltage 400 to 600V
Forward Current 1.0A
Reverse Recovery Time 50ns
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
MURS140
MURS160
Unit
Device Marking Codes
MG
MJ
Maximum repetitive peak reverse voltage
VRRM
400
600
V
Working peak reverse voltage
VRWM
400
600
V
Maximum DC blocking voltage
VDC
400
600
V
Maximum average forward rectified current at TL = 150°C
IF(AV)
1.0
A
See figure 1
TL = 125°C
2.0
Peak forward surge current 8.3 ms single half sine-wave
IFSM
35
A
superimposed on rated load (JEDEC Method)
Typical thermal resistance junction to ambient
R
ΘJL
13
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +175°C
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous
at IF = 1.0A, TJ = 25°C
1.25
forward voltage (Note 1)
at IF = 1.0A, TJ = 150°C
VF
1.05
V
Maximum instantaneous reverse current
TJ = 25°C
IR
5.0
A
at rated DC blocking voltage (Note 1)
TJ = 150°C
150
Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A
trr
50
ns
Maximum reverse recovery time at,
trr
75
ns
IF = 1.0A, di/dt = 50A/
s, VR = 30V, Irr = 10% IRM
Maximum forward recovery time at IF = 1.0A, di/dt = 100A/s,
recovery to 1.0V
tfr
50
ns
Notes: (1) Pulse test: tp = 300
s, duty cycle ≤ 2%
Features
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Ideally suited for use in very high frequency switching
power supplies, inverters and as free wheeling diodes
Ultrafast recovery time for high efficiency
For surface mount applications Glass passivated junction
High temperature soldering guaranteed:
250°C/10 seconds on terminals
Mechanical Data
Case: JEDEC DO-214AA molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 oz., 0.093 g
Packaging Codes/Options:
5/3.2K per 13” reel (12mm tape)
2/750 EA per 7” reel (12mm tape)
Dimensions in inches
and (millimeters)
DO-214AA (SMB)
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
Mounting Pad Layout
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MURS140/5-E3 | 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS140/2-E3 | 2 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS360SHE3/5BT | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MURS340SHE3/5BT | 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AA |
| MV209RLRA | VHF BAND, 29 pF, 30 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE, TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS160A | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:ULTRAFAST RECTIFIER VOLTAGE RANGE 200 to 600 Volts CURRENT 1.0 Ampere |
| MURS160-E3 | 制造商:Vishay Semiconductors 功能描述:ULTRA FAST RECOVERY POWER RECTIFIER |
| MURS160-E3/1T | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS160-E3/2 | 制造商:Vishay Angstrohm 功能描述:Diode Switching 600V 2A 2-Pin SMB T/R |
| MURS160-E3/2CT | 功能描述:整流器 600 Volt 1.0A 50ns 35 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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