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參數(shù)資料
| 型號： | MURS120E3/TR13 |
| 廠商： | MICROSEMI CORP |
| 元件分類： | 整流器 |
| 英文描述： | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AA |
| 封裝： | ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 318K |
| 代理商： | MURS120E3/TR13 |
Surface Mount Ultrafast Glass Passivated Rectifier
www.Microsemi.com
1/3
Copyright
2009
Aug 2009 Rev. A
MURS120e3
Main product characteristics
Features and benefits
For surface mounting applications
Glass passivated chip
Ideally suited for use in very high frequency switching power supplies, inverters and as a free wheeling diode.
Ultrafast recovery time for high efficiency
RoHS compliant (2002/95/EC), MSL level 1 (J-STD-020)
Molding compound meets UL 94V-0 flammability rating
Absolute maximum ratings and electrical characteristics
(1)
Symbol
Parameter
Value
UNIT
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
VRMS
Maximum RMS Voltage
200
V
VRRM
Maximum Peak Repetitive Reverse Voltage
200
V
IF(AV)
Max. average rectified forward current (fig 1) TL = 155°C
TL = 145°C
1.0
2.0
A
IFSM
Non repetitive peak forward surge current
(8.3ms single half sine wave) TL=110°C
40.0
A
VF
Max. instantaneous forward voltage @ 1A, TJ=25°C
@ 1A, TJ=150°C
0.875
0.710
V
IR
Max. D.C. reverse current
@ TA=25°C
at rated DC blocking voltage
@ TA=125°C
2.0
200
A
trr
Maximum reverse recovery time
(IF=0.5A, IR=1.0A, Irr=0.25A)
25
ns
trr
Maximum reverse recovery time
(IF=1.0A, di/dt=50A/s, VR=30V, Irr=10%.IRM)
35
ns
tfr
Maximum forward recovery time
(IF=1.0A, di/dt=100A/s, recovery to 1.0V)
25
ns
RθJA
Typical thermal resistance
(2)
13
C/W
TSTG, TJ
Storage and operating temperature
-55 to +175
C
(1)
All ratings at 25C unless specified otherwise
(2)
Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2” (5.0 x 5.0mm) copper
pad areas
IO
1A
VRRM
200V
IFSM
40A
IR
2A / 200 A
trr
25ns
Tj(MAX)
175C
DO-214AA (SMB)
RoHS
COMPLIANT
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| MURS360SHE3/5BT | 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MURS120HE3/2CT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120HE3/52T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120HE3/55T | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120HE3/5BT | 功能描述:整流器 200 Volt 1.0A 25ns 40 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MURS120-LFR | 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:1A ULTRA FAST RECOVERY SURFACE MOUNT RECTIFIER |
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