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參數(shù)資料
| 型號： | MURB820TRRPBF |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | MURB820TRRPBF |
MUR820, MURB820, MURB820-1
Bulletin PD-20731 rev. A 03/00
4
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current
Fig.6-Forward Power Loss Characteristics
(3) Formula used: T
C = TJ - (Pd + PdREV) x RthJC ;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd
REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = rated VR
Average
Power
Loss
(Watts
)
trr
(n
C
)
0
2
4
6
8
10
0369
12
DC
RMS Limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
Q
rr
(n
C
)
10
20
30
40
50
100
1000
IF = 16A
IF = 8 A
IF = 4 A
V = 160V
T = 125C
T = 25C
R
J
0
40
80
120
160
200
100
1000
IF = 16A
IF = 8 A
IF = 4 A
V = 160V
T = 125C
T = 25C
R
J
130
140
150
160
170
180
036
9
12
DC
see note (3)
Square wave (D = 0.50)
Rated Vr applied
AverageForwardCurrent-IF
(AV)(A)
Allowable
Case
Temperature
(°C)
AverageForwardCurrent-IF
(AV)(A)
Fig. 8 - Typical Stored Charge vs. diF /dt
Fig. 7 - Typical Reverse Recovery vs. di F /dt
diF/dt (A/s )
di F /dt (A/s )
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