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參數(shù)資料
| 型號： | MURB820TRRPBF |
| 元件分類： | 整流器 |
| 英文描述： | 8 A, 200 V, SILICON, RECTIFIER DIODE |
| 封裝： | D2PAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 173K |
| 代理商： | MURB820TRRPBF |
Bulletin PD-20731 rev. A 03/00
3
MUR820, MURB820, MURB820-1
Fig.2-Typical Values Of Reverse Current
Vs. Reverse Voltage
Fig.1-Typical Forward Voltage Drop Characteristics
Reverse Voltage-V
R(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
T = 175C
T = 150C
T = 25C
J
0.001
0.01
0.1
1
10
100
0
50
100
150
200
250
150C
125C
100C
25C
T = 175C
J
10
100
1000
1
10
100
1000
T = 25C
J
Forward Voltage Drop-V
FM(V)
Instantaneous
Forward
Current
-I
F(A)
Reverse Voltage-V
R (V)
Junction
Capacitance
-C
T
(pF)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
t1,Rectangular Pulse Duration (Seconds)
Thermal
Impedance
Z
thJC
(°C/W)
Reverse
Current
-I
R
(A)
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Single Pulse
(Thermal Resistance)
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
2
t
1
t
P
DM
Notes:
1. Duty factor D = t1/ t2
2. Peak Tj = Pdm x ZthJC + Tc
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