參數(shù)資料
型號: MURA160T3
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: Surface Mount Ultrafast Power Rectifier
中文描述: 2 A, 600 V, SILICON, RECTIFIER DIODE
封裝: PLASTIC SMA PACKAGE, 2 PIN
文件頁數(shù): 2/4頁
文件大?。?/td> 39K
代理商: MURA160T3
MURA160T3
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Lead (T
L
= 25
°
C) (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Psi
JL
(Note 2)
R
θ
JA
24
216
°
C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 1.0 A, T
J
= 25
°
C)
(i
F
= 1.0 A, T
J
= 150
°
C)
v
F
1.25
1.05
Volts
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
J
= 25
°
C)
(Rated dc Voltage, T
J
= 150
°
C)
i
R
5.0
150
μ
A
Maximum Reverse Recovery Time
(i
F
= 1.0 A, di/dt = 50 A/
μ
s)
t
rr
75
ns
1. Rating applies when surface mounted on the minimum pad size recommended, PC Board FR-4.
2. In compliance with JEDEC 51, these values (historically represented by R
θ
JL
) are now referenced as Psi
JL
.
3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle
2.0%.
10
0.1
200
100
600
V
R
, REVERSE VOLTAGE (VOLTS)
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Reverse Current
Figure 2. Maximum Reverse Current
Figure 3. Typical Forward Voltage
Figure 4. Maximum Forward Voltage
1
100
0
I
R
,
1.1
0.9
0.7
0.5
1.3
0.01
10
1
0.1
1.5
I
F
,
100
200
100
600
V
R
, REVERSE VOLTAGE (VOLTS)
V
F
, INSTANTANEOUS VOLTAGE (VOLTS)
1
1000
0
I
R
,
1.1
0.9
1.3
0.01
10
1
0.1
1.7
1.5
I
F
,
T
J
= 175
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
J
= 175
°
C
T
J
= 100
°
C
T
J
= 25
°
C
T
C
= 175
°
C
100
°
C
25
°
C
T
C
= 175
°
C
100
°
C
25
°
C
300
300
1.7
1.9
400
500
0.01
400
500
0.7
0.5
0.3
0.3
10
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