參數(shù)資料
型號: MUR880E
廠商: ON SEMICONDUCTOR
元件分類: 參考電壓二極管
英文描述: SWITCHMODE Power Rectifiers
中文描述: 8 A, 800 V, SILICON, RECTIFIER DIODE, TO-220AC
封裝: LEAD FREE, PLASTIC, CASE 221B-04, 2 PIN
文件頁數(shù): 2/6頁
文件大小: 94K
代理商: MUR880E
MUR8100E, MUR880E
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MUR880E
MUR8100E
V
RRM
V
RWM
V
R
800
1000
V
Average Rectified Forward Current
(Rated V
R
, T
C
= 150
°
C)
Total Device
I
F(AV)
8.0
A
Peak Repetitive Forward Current
(Rated V
R
, Square Wave,
20 kHz, T
C
= 150
°
C)
I
FM
16
A
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
100
A
Operating Junction and Storage Temperature Range
T
J
, T
stg
65 to +175
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance, JunctiontoCase
R
JC
2.0
°
C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 1)
(i
F
= 8.0 A, T
C
= 150
°
C)
(i
F
= 8.0 A, T
C
= 25
°
C)
v
F
1.5
1.8
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, T
C
= 100
°
C)
(Rated DC Voltage, T
C
= 25
°
C)
i
R
500
25
A
Maximum Reverse Recovery Time
(I
F
= 1.0 A, di/dt = 50 A/ s)
(I
F
= 0.5 A, i
R
= 1.0 A, I
REC
= 0.25 A)
t
rr
100
75
ns
Controlled Avalanche Energy
(See Test Circuit in Figure 6)
W
AVAL
20
mJ
1. Pulse Test: Pulse Width = 300 s, Duty Cycle
2.0%.
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