參數(shù)資料
型號(hào): MUN5311DW1T1
廠商: 樂(lè)山無(wú)線電股份有限公司
英文描述: POT 200 OHM 3/4 RECT CERM MT
中文描述: 雙偏置電阻晶體管
文件頁(yè)數(shù): 10/34頁(yè)
文件大?。?/td> 281K
代理商: MUN5311DW1T1
MUN5311DW1T1 Series
http://onsemi.com
10
TYPICAL ELECTRICAL CHARACTERISTICS MUN5313DW1T1 PNP TRANSISTOR
V
I
h
Figure 27. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.010
10
20
30
40
75
°
C
25
°
C
Figure 28. DC Current Gain
1000
100
10
1
10
100
I
C
, COLLECTOR CURRENT (mA)
25
°
C
Figure 29. Output Capacitance
Figure 30. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.0010
10
25
°
C
V
in
, INPUT VOLTAGE (VOLTS)
25
°
C
50
0
10
20
30
40
1
0.8
0.6
0.4
0.2
0
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
C
1
2
3456789
Figure 31. Input Voltage versus Output Current
100
10
1
0.10
10
20
30
40
I
C
, COLLECTOR CURRENT (mA)
T
A
=25
°
C
25
°
C
75
°
C
50
I
C
/I
B
= 10
T
A
=25
°
C
25
°
C
T
A
=75
°
C
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
V
O
= 5 V
T
A
=75
°
C
V
O
= 0.2 V
V
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