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參數(shù)資料
| 型號(hào)： | MUN5311DW1T1 |
| 廠商： | 樂(lè)山無(wú)線電股份有限公司 |
| 英文描述： | POT 200 OHM 3/4 RECT CERM MT |
| 中文描述： | 雙偏置電阻晶體管 |
| 文件頁(yè)數(shù)： | 1/34頁(yè) |
| 文件大?。?/td> | 281K |
| 代理商： | MUN5311DW1T1 |
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Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 9
1
Publication Order Number:
MUN5311DW1T1/D
MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a baseemitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5311DW1T1 series,
two complementary BRT devices are housed in the SOT363 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
PbFree Package is Available
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage
V
CBO
50
Vdc
Collector-Emitter Voltage
V
CEO
50
Vdc
Collector Current
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
P
D
Max
Unit
mW
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
187 (Note 1)
256 (Note 2)
1.5 (Note 1)
2.0 (Note 2)
670 (Note 1)
490 (Note 2)
mW/
°
C
Thermal Resistance
Junction-to-Ambient
R
JA
°
C/W
Characteristic
(Both Junctions Heated)
Symbol
P
D
Max
Unit
mW
Total Device Dissipation
T
A
= 25
°
C
Derate above 25
°
C
250 (Note 1)
385 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
493 (Note 1)
325 (Note 2)
mW/
°
C
Thermal Resistance
Junction-to-Ambient
R
JA
°
C/W
Thermal Resistance
Junction-to-Lead
R
JL
188 (Note 1)
208 (Note 2)
°
C/W
Junction and Storage Temperature
1. FR4 @ Minimum Pad
2. FR4 @ 1.0 x 1.0 inch Pad
T
J
, T
stg
55 to +150
°
C
SOT363
CASE 419B
STYLE 1
MARKING DIAGRAM
Preferred
devices are recommended choices for future use
and best overall value.
ORDERING AND DEVICE MARKING
INFORMATION
See detailed ordering, shipping, and specific marking
information in the table on page 2 of this data sheet.
Q
1
R
1
R
2
R
2
R
1
Q
2
(1)
(2)
(3)
(4)
(5)
(6)
1
6
XX
d
XX= Specific Device Code
d
= Date Code
=
(See Page 2)
1
6
http://onsemi.com
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5311DW1T1/D | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Dual Bias Resistor Transistor |
| MUN5311DW1T1_05 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Dual Bias Resistor Transistors |
| MUN5311DW1T1G | 功能描述:開(kāi)關(guān)晶體管 - 偏壓電阻器 100mA Complementary 50V NPN & PNP RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5311DW1T1G | 制造商:ON Semiconductor 功能描述:Pre-Biased "Digital" Transistor50V V(BR 制造商:ON Semiconductor 功能描述:Pre-Biased "Digital" Transistor,50V V(BR |
| MUN5311DW1T1G_09 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:Dual Bias Resistor Transistors |
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