參數(shù)資料
型號: MUN5311DW1T1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: Dual Bias Resistor Transistors
中文描述: 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419B-02, 6 PIN
文件頁數(shù): 2/34頁
文件大?。?/td> 281K
代理商: MUN5311DW1T1
MUN5311DW1T1 Series
http://onsemi.com
2
ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES
Device
Package
Marking
R1 (K)
R2 (K)
Shipping
MUN5311DW1T1
SOT363
11
10
10
3000/Tape & Reel
MUN5312DW1T1
SOT363
12
22
22
3000/Tape & Reel
MUN5313DW1T1
SOT363
13
47
47
3000/Tape & Reel
MUN5314DW1T1
SOT363
14
10
47
3000/Tape & Reel
MUN5315DW1T1
SOT363
15
10
3000/Tape & Reel
MUN5316DW1T1
SOT363
16
4.7
3000/Tape & Reel
MUN5316DW1T1G
SOT363
(PbFree)
16
4.7
3000/Tape & Reel
MUN5330DW1T1
SOT363
30
1.0
1.0
3000/Tape & Reel
MUN5331DW1T1
SOT363
31
2.2
2.2
3000/Tape & Reel
MUN5332DW1T1
SOT363
32
4.7
4.7
3000/Tape & Reel
MUN5333DW1T1
SOT363
33
4.7
47
3000/Tape & Reel
MUN5334DW1T1
SOT363
34
22
47
3000/Tape & Reel
MUN5335DW1T1
SOT363
35
2.2
47
3000/Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
, minus sign for Q
1
(PNP) omitted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
V
(BR)CEO
50
Vdc
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