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參數(shù)資料
| 型號(hào)： | MUN5211DW1T1G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Bias Resistor Transistors |
| 中文描述： | 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | HALOGEN FREE AND ROHS COMPLIANT, CASE 419B-02, SC-88, SC-70, 6 PIN |
| 文件頁數(shù)： | 3/21頁 |
| 文件大?。?/td> | 148K |
| 代理商： | MUN5211DW1T1G |
MUN5211DW1T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, common for Q
1
and Q
2
)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector-Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5230DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
I
EBO
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage (I
C
= 10 A, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector-Emitter Breakdown Voltage (Note 3) (I
C
= 2.0 mA, I
B
= 0)
3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5211DW1T1, G
MUN5212DW1T1, G
MUN5213DW1T1, G
MUN5214DW1T1, G
MUN5215DW1T1, G
MUN5216DW1T1, G
MUN5230DW1T1, G
MUN5231DW1T1, G
MUN5232DW1T1, G
MUN5233DW1T1, G
MUN5234DW1T1, G
MUN5235DW1T1, G
MUN5236DW1T1, G
MUN5237DW1T1, G
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MUN5214DW1T1G | Dual Bias Resistor Transistors |
| MUN5215DW1T1G | Dual Bias Resistor Transistors |
| MUN5216DW1T1G | Dual Bias Resistor Transistors |
| MUN5230DW1T1G | Dual Bias Resistor Transistors |
| MUN5231DW1T1G | Dual Bias Resistor Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MUN5211DW1T1G | 制造商:ON Semiconductor 功能描述:BRT TRANSISTOR 50V 10K/10KOHM SOT-363 制造商:ON Semiconductor 功能描述:BRT TRANSISTOR, 50V, 10K/10KOHM, SOT-363 |
| MUN5211DW1T1G_09 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Dual Bias Resistor Transistors |
| MUN5211T1 | 功能描述:開關(guān)晶體管 - 偏壓電阻器 100mA 50V BRT NPN RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| MUN5211T1/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Bias Resistor Transistor |
| MUN5211T1_06 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Bias Resistor Transistor |
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