參數(shù)資料
型號(hào): MUN5137T1G
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Bias Resistor Transistor
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: HALOGEN FREE AND ROHS COMPLIANT, CASE 419-04, SC-70, 3 PIN
文件頁(yè)數(shù): 8/12頁(yè)
文件大?。?/td> 114K
代理商: MUN5137T1G
MUN5111T1 Series
http://onsemi.com
8
TYPICAL ELECTRICAL CHARACTERISTICS MUN5114T1
10
1
0.1
0
10
20
30
40
50
100
10
10
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00
2
4
6
8
10
15
20
25
30
35
40
45
50
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
V
I
h
Figure 17. V
CE(sat)
versus I
C
I
C
, COLLECTOR CURRENT (mA)
0
20
40
60
80
VC
Figure 18. DC Current Gain
1
10
100
I
C
, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
V
in
, INPUT VOLTAGE (VOLTS)
C
Figure 21. Input Voltage versus Output Current
I
C
, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
25
°
C
25
°
C
T
A
=75
°
C
V
CE
= 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
15
20 40
50 60 70
80 90
f = 1 MHz
l
E
= 0 V
T
A
= 25
°
C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25
°
C
I
C
/I
B
= 10
T
A
=25
°
C
T
A
=75
°
C
25
°
C
25
°
C
V
O
= 5 V
V
O
= 0.2 V
25
°
C
T
A
=25
°
C
75
°
C
75
°
C
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