參數(shù)資料
型號: MUN5111T1
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: PNP SILICON BIAS RESISTOR TRANSISTOR
中文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: CASE 419-04, SC-70, 3 PIN
文件頁數(shù): 7/10頁
文件大?。?/td> 238K
代理商: MUN5111T1
7
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114T1
10
1
0.1
0
10
20
30
40
50
100
10
10
2
4
6
8
10
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
15
20
25
30
35
40
45
50
VR, REVERSE BIAS VOLTAGE (VOLTS)
V
I
h
Figure 17. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
0
20
40
60
80
VC
Figure 18. DC Current Gain
1
10
100
IC, COLLECTOR CURRENT (mA)
Figure 19. Output Capacitance
Figure 20. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
C
Figure 21. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
–25
°
C
25
°
C
TA= 75
°
C
VCE = 10 V
180
160
140
120
100
80
60
40
20
0
2
4
6
8
15
20
40
50
60
70
80
90
f = 1 MHz
lE = 0 V
TA = 25
°
C
LOAD
+12 V
Figure 22. Inexpensive, Unregulated Current Source
Typical Application
for PNP BRTs
25
°
C
IC/IB = 10
TA= –25
°
C
TA= 75
°
C
25
°
C
–25
°
C
VO = 5 V
VO = 0.2 V
25
°
C
TA= –25
°
C
75
°
C
75
°
C
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