參數(shù)資料
型號: MUBW25-12A7
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: Converter - Brake - Inverter Module
中文描述: 20 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-24
文件頁數(shù): 3/8頁
文件大?。?/td> 192K
代理商: MUBW25-12A7
2001 IXYS All rights reserved
3 - 8
MUBW 25-12 A7
Brake Chopper T7
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25
°
C to 150
°
C
1200
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C80
T
C
= 25
°
C
T
C
= 80
°
C
20
15
A
A
RBSOA
V
GE
=
±
15 V; R
= 82
; T
VJ
= 125
°
C
Clamped inductive load; L = 100 μH
I
CM
= 20
V
CEK
V
CES
A
t
(SCSOA)
V
= 720 V; V
GE
=
±
15 V; R
G
= 82
; T
VJ
= 125
°
C
non-repetitive
10
μs
P
tot
T
C
= 25
°
C
105
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 15 A; V
GE
= 15 V; T
VJ
= 25
°
C
2.9
3.3
3.3
V
V
T
VJ
= 125
°
C
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25
°
C
T
VJ
= 125
°
C
0.5
mA
mA
0.3
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
50
40
290
60
1.8
1.6
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MH z
V
CE
= 600 V; V
GE
= 15 V; I
C
= 15 A
600
45
pF
nC
R
thJC
Brake Chopper D7
1.2 K/W
Symbol
Conditions
Maximum Ratings
V
RRM
T
VJ
= 25
°
C to 150
°
C
1200
V
I
F25
I
F80
T
C
= 25
°
C
T
C
= 80
°
C
17
11
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 15 A; T
VJ
= 25
°
C
T
VJ
= 125
°
C
3.2
V
V
2.3
I
R
V
R
= V
RRM
;
T
VJ
= 25
°
C
T
VJ
= 125
°
C
0.06
mA
mA
0.07
I
RM
t
rr
I
F
= 10 A; di
F
/dt = -400 A/μs; T
VJ
= 125
°
C
V
R
= 600 V
13
110
A
ns
R
thJC
3.2 K/W
Inductive load, T
= 125
°
C
V
CE
= 600 V; I
C
= 15 A
V
GE
= ±15 V; R
G
= 82
相關PDF資料
PDF描述
MUBW30-12A6 Converter - Brake - Inverter Module
MUBW50-06A8 Converter - Brake - Inverter Module (CBI3)
MUN2134T1G Bias Resistor Transistors
MUN2111T3G Bias Resistor Transistors
MUN2115T1G Bias Resistor Transistors
相關代理商/技術參數(shù)
參數(shù)描述
MUBW25-12T7 功能描述:分立半導體模塊 25 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
MUBW30-06A7 功能描述:分立半導體模塊 30 Amps 600V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
MUBW30-12A6 功能描述:MODULE IGBT CBI E1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿(最大):600V Vge, Ic時的最大Vce(開):1.4V @ 15V,100A 電流 - 集電極 (Ic)(最大):430A 電流 - 集電極截止(最大):100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4,miniBLOC 供應商設備封裝:SOT-227B
MUBW30-12A6K 功能描述:分立半導體模塊 30 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝:
MUBW30-12E6K 功能描述:分立半導體模塊 30 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: