參數(shù)資料
型號： MUBW25-12A7
廠商： IXYS CORP
元件分類： IGBT 晶體管
英文描述： Converter - Brake - Inverter Module
中文描述： 20 A, 1200 V, N-CHANNEL IGBT
封裝： MODULE-24
文件頁數(shù)： 2/8頁
文件大?。?/td> 192K
代理商： MUBW25-12A7
2001 IXYS All rights reserved
2 - 8
MUBW 25-12 A7
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25
°
C to 150
°
C
1200
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C80
T
C
= 25
°
C
T
C
= 80
°
C
50
35
A
A
RBSOA
V
GE
=
±
15 V; R
= 47
; T
VJ
= 125
°
C
Clamped inductive load; L = 100 μH
I
CM
= 50
V
CEK
≤
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 47
; T
VJ
= 125
°
C
non-repetitive
10
μs
P
tot
T
C
= 25
°
C
225
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 25 A; V
GE
= 15 V; T
VJ
= 25
°
C
2.2
2.5
2.7
V
V
T
VJ
= 125
°
C
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25
°
C
T
VJ
= 125
°
C
0.9
mA
mA
0.9
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
100
70
500
70
2.8
3.8
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 600V; V
GE
= 15 V; I
C
= 25 A
1650
120
pF
nC
R
thJC
(per IGBT)
0.55 K/W
Inductive load, T
= 125
°
C
V
CE
= 600 V; I
C
= 25 A
V
GE
= ±15 V; R
G
= 47
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25
°
C
T
C
= 80
°
C
28
18
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 15 A; V
GE
= 0 V; T
VJ
= 25
°
C
3.1
V
V
T
VJ
= 125
°
C
2.1
I
RM
t
rr
I
F
= 25 A; di
/dt = -400A/μs; T
VJ
= 125
°
C
V
R
= 600 V; V
GE
= 0 V
16
130
A
ns
R
thJC
(per diode)
2.1 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J
= 125
°
C)
V
0
= 1.16 V; R
0
= 9 m
T1 - T6 / D1 - D6
IGBT (typ. at V
= 15 V; T
= 125
°
C)
V
0
= 1.38 V; R
0
= 46 m
Free Wheeling Diode (typ. at T
J
= 125
°
C)
V
0
= 1.32 V; R
0
= 30 m
T7 / D7
IGBT (typ. at V
= 15 V; T
= 125
°
C)
V
0
= 1.32 V; R
0
= 131 m
Free Wheeling Diode (typ. at T
J
= 125
°
C)
V
0
= 1.39 V; R
0
= 56 m
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.106 J/K; R
th1
= 1.06 K/W
C
th2
= 0.79 J/K; R
th2
= 0.239 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.201 J/K; R
th1
= 0.419 K/W
C
th2
= 1.25 J/K; R
th2
= 0.131 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.758 K/W
C
th2
= 0.639 J/K; R
th2
= 0.342 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.09 J/K; R
th1
= 0.954 K/W
C
th2
= 0.809 J/K; R
th2
= 0.246 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
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