參數(shù)資料
型號: MUBW15-06A6
廠商: IXYS CORP
元件分類: IGBT 晶體管
英文描述: Converter - Brake - Inverter Module (CBI1)
中文描述: 18 A, 600 V, N-CHANNEL IGBT
封裝: MODULE-25
文件頁數(shù): 3/8頁
文件大?。?/td> 210K
代理商: MUBW15-06A6
2000 IXYS All rights reserved
3 - 8
MUBW 15-06 A6
Brake Chopper T7, D7
Symbol
Conditions
Maximum Ratings
V
CES
V
CGR
T
VJ
= 25°C
T
VJ
= 25°C; R
GE
= 20k
600
V
600
V
V
GE
T
VJ
= 25°C
±20
V
I
C
T
C
= 25°C
T
C
= 90°C
11
A
A
8
I
CM
t
p
= 1 ms = 1% duty cycle;
T
C
= 25°C
T
C
= 90°C
22
16
A
A
t
SC
IGBT V
= 600 V; T
VJ
= 125°C
non-repetitive
10
μs
P
tot
T
C
= 25°C
45
W
T
VJ
T
VJ
Free-Wheeling Diode
IGBT
+150
+150
°C
°C
Symbol
Conditions
Characteristic Values
(T
VJ
= 25 C, unless otherwise specified)
min.
typ.
max.
I
CES
V
GE
= 0 V; V
CE
= 600 V
20
μA
I
GES
V
CE
= 0 V; V
GE
= 25 V
100
nA
V
GE(th)
V
GE
= V
CE
; I
C
= 0.5 mA
3
4
5
V
V
(BR)CES
V
GE
= 0 V; I
C
= 0.5 mA; T
VJ
= -40°C
600
V
V
CE(sat)
V
GE
= 15 V; I
C
= 6 A; T
VJ
= 25°C
2
2.5
2.8
V
V
T
VJ
= 150°C
2.3
t
f
t
r
t
d(on)
t
d(off)
E
off
E
on
75
30
110
45
ns
ns
50
250
80
375
ns
ns
0.21
0.25
mJ
mJ
C
iss
C
oss
C
rss
350
40
25
435
50
30
pF
pF
pF
g
fs
V
CE
= 20 V; I
C
= 6 A
4.2
S
Q
g
V
CC
= 400 V; I
C
= 6 A pulse; V
GE
= 15 V
32.5
C
V
F
I
F
= 10 A; V
GE
= 0 V; T
VJ
= 25°C
2
V
V
T
VJ
= 150°C
1.8
t
rr
I
F
= 10 A; V
= -300 V; V
= 0 V
di
F
/dt = -350 A/μs; T
VJ
= 150°C
0.2
μs
Q
r
I
F
= 10 A; V
= -300 V;
di
F
/dt = -350 A/μs; V
GE
= 0 V; T
VJ
= 125°C
T
VJ
= 25°C
0.3
0.9
μC
μC
I
r
250
μA
R
thJC
IGBT
Diode
(per die)
(per die)
2.3
2.3
°C/W
°C/W
Inductive load, T
= 150°C
V
CC
= 400 V; I
C
= 6 A
R
G
= 50 ; V
GE
= ±15 V
V
GE
= 0 V
V
= 25 V
f = 1 MHz
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