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參數(shù)資料
| 型號(hào)： | MTW45N10 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| 中文描述： | TMOS是45安培，功率場(chǎng)效應(yīng)晶體管100伏特的RDS（on）\u003d 0.035歐姆 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 155K |
| 代理商： | MTW45N10 |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
(
R
R
0
1.5
2.0
3.0
4.0
5.0
0
30
50
70
90
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2.0
3.0
4.0
5.0
7.0
9.0
0
30
50
70
90
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
20
40
60
80
90
0.01
0.03
0.05
0
20
40
60
80
90
0.022
0.024
0.028
0.032
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.4
0.8
1.2
1.6
2.0
0
100
1.0
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
≥
10 V
100
°
C
TJ = –55
°
C
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 22.5 A
7 V
8 V
6 V
5 V
9 V
4 V
80
60
40
10
0.04
0.02
80
60
40
10
0.030
0.026
20
0.5
1.0
2.5
3.5
4.5
2.5
3.5
4.5
6.5
8.0
10
30
50
70
10
30
50
70
20
40
60
80
20
8.5
6.0
7.5
TJ = 125
°
C
100
°
C
25
°
C
5.5
15 V
25
°
C
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