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參數(shù)資料
| 型號： | MTW45N10 |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHM |
| 中文描述： | TMOS是45安培，功率場效應(yīng)晶體管100伏特的RDS（on）\u003d 0.035歐姆 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 155K |
| 代理商： | MTW45N10 |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
100
—
—
116
—
—
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VDS = 100 Vdc, VGS = 0 Vdc)
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0)
IDSS
—
—
—
—
10
100
μ
Adc
IGSS
—
—
100
nAdc
ON CHARACTERISTICS (1)
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
2.0
—
—
7.0
4.0
—
Vdc
mV/
°
C
Static Drain–Source On–Resistance (VGS = 10 Vdc, ID = 22.5 Adc)
Drain–Source On–Voltage (VGS = 10 Vdc)
(ID = 45 Adc)
(ID = 22.5 Adc, TJ = 125
°
C)
RDS(on)
VDS(on)
—
0.027
0.035
Ohm
—
—
1.13
—
2.16
1.53
Vdc
Forward Transconductance (VDS = 10 Vdc, ID = 22.5 Adc)
gFS
12
—
—
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
25 Vdc V
Ciss
Coss
Crss
—
3480
5000
pF
Output Capacitance
—
1240
2000
Reverse Transfer Capacitance
—
315
650
SWITCHING CHARACTERISTICS (2)
Turn–On Delay Time
(VDD= 50 Vdc, ID = 45 Adc,
VGS= 10 Vdc
VGS = 10 Vdc,
RG = 9.1
td(on)
tr
td(off)
tf
—
25
50
ns
Rise Time
—
234
470
Turn–Off Delay Time
—
83
170
Fall Time
)
—
116
240
Gate Charge
(See Figure 8)
(VDS = 80 Vdc,D
(DS
VGS = 10 Vdc)
QT
Q1
Q2
Q3
—
106
220
nC
—
26
—
,
—
54
—
—
44
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage (1)
(IS = 45 Adc, VGS = 0 Vdc)
(IS = 45 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
—
—
1.09
1.04
1.635
—
Vdc
Reverse Recovery Time
(See Figure 14)
(IS = 45 Adc, VGS
(S
dIS/dt = 100 A/
μ
s)
trr
ta
—
166
—
ns
—
118
—
,
tb
—
48
—
Reverse Recovery Stored Charge
QRR
—
1.1
—
μ
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
LD
—
4.5
—
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
LS
—
7.5
—
nH
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
(2) Switching characteristics are independent of operating junction temperature.
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