參數(shù)資料
型號(hào): MTW10N100E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
中文描述: 10 A, 1000 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 192K
代理商: MTW10N100E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
0.1
1.0
1000
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.01
100
10
0.1
10
100
μ
s
1 ms
10 ms
dc
10
μ
s
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
I
1.0
t, TIME (s)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
1.0E–05
1.0E–04
1.0E–02
0.1
1.0
0.01
1.0E–03
1.0E–01
1.0E+100
0.2
0.1
1.0E+01
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
50
100
125
75
500
400
300
100
200
ID = 10 A
D = 0.5
0.02
0.01
SINGLE PULSE
0.05
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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