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參數(shù)資料
| 型號： | MTSF3N03HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM |
| 中文描述： | 3700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 232K |
| 代理商： | MTSF3N03HD |
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Max
30
30
±
20
70
1.79
14.29
5.7
4.5
45
Unit
V
V
V
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
mJ
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Minimum
FR–4 or G–10 PCB
Figure 2 below
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
Steady State
Operating and Storage Temperature Range
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 30 Vdc, VGS = 5.0 Vdc, Peak IL = 9.0 Apk, L = 5.0 mH, RG = 25 )
(1) Repetitive rating; pulse width limited by maximum junction temperature.
ID
ID
IDM
TJ, Tstg
EAS
160
0.78
6.25
3.8
3.0
30
– 55 to 150
200
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
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參數(shù)描述 |
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