參數(shù)資料
型號(hào)： MTSF3N02HD
廠商： MOTOROLA INC
元件分類： 小信號(hào)晶體管
英文描述： SINGLE TMOS POWER MOSFET 4.0 AMPERES 20 VOLTS RDS(on) = 0.040 OHM
中文描述： 3800 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
文件頁(yè)數(shù)： 2/12頁(yè)
文件大?。?/td> 235K
代理商： MTSF3N02HD
2
Motorola TMOS Power MOSFET Transistor Device Data
MAXIMUM RATINGS
(TJ = 25
°
C unless otherwise noted)
Rating
Symbol
VDSS
VDGR
VGS
RTHJA
PD
Max
20
20
±
8.0
70
1.79
14.29
6.1
4.9
49
Unit
V
V
V
°
C/W
Watts
mW/
°
C
A
A
A
°
C/W
Watts
mW/
°
C
A
A
A
°
C
Drain–to–Source Voltage
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
1 inch SQ.
FR–4 or G–10 PCB
Figure 1 below
Steady State
Minimum
FR–4 or G–10 PCB
Figure 2 below
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
Thermal Resistance — Junction to Ambient
Total Power Dissipation @ TA = 25
°
C
Linear Derating Factor
Drain Current — Continuous @ TA = 25
°
C
Continuous @ TA = 70
°
C
Pulsed Drain Current (1)
ID
ID
IDM
RTHJA
PD
Steady State
Operating and Storage Temperature Range
(1) Repetitive rating; pulse width limited by maximum junction temperature.
ID
ID
IDM
TJ, Tstg
160
0.78
6.25
4.0
3.2
32
– 55 to 150
Figure 1. 1.0 Inch Square FR–4 or G–10 PCB
Figure 2. Minimum FR–4 or G–10 PCB
相關(guān)PDF資料
PDF描述
MTSF3N03HD SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
MTV16N50E TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
MTW10N100E TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
MTW10N40E TMOS E-FET POWER FIELD EFFECT TRANSISTOR
MTW14N50E CONNECTOR ACCESSORY
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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MTSF3N03HD 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:SINGLE TMOS POWER MOSFET 3.8 AMPERES 30 VOLTS RDS(on) = 0.040 OHM
MTSF3N03HDR2 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 30V 5.7A 8-Pin SOP T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk
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