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參數(shù)資料
| 型號： | MTP75N05HD |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS |
| 中文描述： | 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 214K |
| 代理商： | MTP75N05HD |
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy–efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and other inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
Ultra Low RDS(on), High–Cell Density, HDTMOS
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, Yet Soft Recovery
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
50
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
50
Vdc
±
20
Vdc
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
75
65
225
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
150
1
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vpk, IL = 75 Apk, L = 0.177 mH, RG = 25
)
500
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
1.00
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTP75N05HD/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A–06, Style 5
TO–220AB
TMOS POWER FET
75 AMPERES
RDS(on) = 9.5 m
50 VOLTS
Motorola Preferred Device
D
S
G
相關PDF資料 |
PDF描述 |
|---|---|
| MTP75N05HD | Power MOSFET 75 Amps, 50 Volts |
| MTP75N06HD | TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS |
| MTP7N20E | TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS |
| MTP7P06 | POWER FIELD EFFECT TRANSISTOR |
| MTP9N25E | TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP75N06HD | 制造商:ON Semiconductor 功能描述: |
| MTP75S | 制造商:NELLSEMI 制造商全稱:Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 75A |
| MTP786K050P1C | 功能描述:鉭質(zhì)電容器-濕式 78uF 50V 10% "C" RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫存號:T4 Case 外殼直徑:9.52 mm 外殼長度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk |
| MTP786M050P1C | 制造商:Mallory Sonalert Products Inc 功能描述: |
| MTP7N06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7A I(D) | TO-220AB |
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