參數(shù)資料
型號(hào)： MTP75N05HD
廠商： ON SEMICONDUCTOR
元件分類(lèi)： JFETs
英文描述： Power MOSFET 75 Amps, 50 Volts
中文描述： 75 A, 50 V, 0.0095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： CASE 221A-09, 3 PIN
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 214K
代理商： MTP75N05HD
1
Motorola TMOS Power MOSFET Transistor Device Data
N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy–efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and other inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients.
Ultra Low RDS(on), High–Cell Density, HDTMOS
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
Diode Exhibits High Speed, Yet Soft Recovery
IDSS and VDS(on) Specified at Elevated Temperature
Avalanche Energy Specified
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
VDGR
VGS
ID
ID
IDM
50
Vdc
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage — Continuous
50
Vdc
±
20
Vdc
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
75
65
225
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
150
1
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 175
°
C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vpk, IL = 75 Apk, L = 0.177 mH, RG = 25
)
500
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
TL
1.00
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
260
°
C
Designer’s Data for “Worst Case” Conditions
— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola Inc.
Preferred
devices are Motorola recommended choices for future use and best overall value.
REV 2
Order this document
by MTP75N05HD/D
SEMICONDUCTOR TECHNICAL DATA
CASE 221A–06, Style 5
TO–220AB
TMOS POWER FET
75 AMPERES
RDS(on) = 9.5 m
50 VOLTS
Motorola Preferred Device
D
S
G
相關(guān)PDF資料
PDF描述
MTP75N06HD TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS
MTP7N20E TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS
MTP7P06 POWER FIELD EFFECT TRANSISTOR
MTP9N25E TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM
MTP9N25 TMOS POWER FET 9.0 AMPERES 250 VOLTS RDS(on) = 0.45 OHM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MTP75N06HD 制造商:ON Semiconductor 功能描述:
MTP75S 制造商:NELLSEMI 制造商全稱(chēng):Nell Semiconductor Co., Ltd 功能描述:Three-Phase Bridge Rectifier, 75A
MTP786K050P1C 功能描述:鉭質(zhì)電容器-濕式 78uF 50V 10% "C" RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類(lèi)型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
MTP786M050P1C 制造商:Mallory Sonalert Products Inc 功能描述:
MTP7N06 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7A I(D) | TO-220AB
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