參數(shù)資料
型號(hào): MTP50N06VL
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM
中文描述: 42 A, 60 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 179K
代理商: MTP50N06VL
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
0
0.8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
1.6
2.4
3.2
4.0
0
20
60
100
Figure 1. On–Region Characteristics
ID
1
3
5
7
9
0
20
60
100
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
20
60
100
0.01
0.016
0.028
0.04
R
0
20
80
100
0.021
0.027
0.033
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
20
50
60
1
10
1000
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 25
°
C
VDS
10 V
TJ = – 55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
9 V
8 V
6 V
5 V
7 V
40
80
2
4
6
8
40
80
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
40
80
40
60
10
30
40
0.022
0.034
0.024
0.030
VGS = 10 V
15 V
25
°
C
100
°
C
TJ = 125
°
C
100
R
(
TJ, JUNCTION TEMPERATURE (
°
C)
VGS = 10 V
ID = 21 A
2
1.5
1
0.5
0
–50
–25
0
25
50
75
100
125
150
175
2.5
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