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參數(shù)資料
| 型號(hào)： | MTP40N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 160K |
| 代理商： | MTP40N10E |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
100 s
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
0.1
1.0
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
A
I
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10 s
25
50
75
100
125
10
VGS = 20 V
SINGLE PULSE
TC = 25
°
C
ID = 40 A
100
150
t, TIME (seconds)
Figure 13. Thermal Response
r
T
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
1000
1.0
0
800
600
500
400
700
100
10
300
200
100
0.01
0.1
1.0
1.0E–05
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
1.0 ms
10 ms
dc
D = 0.5
0.2
0.1
SINGLE PULSE
0.05
0.02
0.0
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP4N40E | TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM |
| MTP4N50E | TMOS POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS |
| MTP50N06 | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06EL | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
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| MTP4409H8 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:P-Channel Logic Level Enhancement Mode Power MOSFET |
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