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參數(shù)資料
| 型號： | MTP40N10E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 40 A, 100 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 160K |
| 代理商： | MTP40N10E |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
0
1
2
3
4
5
6
7
8
9
10
20
10
40
30
60
50
80
70
0
VGS = 10 V
TJ = 25
°
C
2
3
4
5
6
7
8
20
10
40
30
60
50
80
70
0
0
10
20
30
40
50
60
70
80
0.02
0.01
0.04
0.03
0.06
0.05
0.07
0
VGS = 10 V
TJ = 100
°
C
0
10
20
30
40
50
60
70
80
0.020
0.015
0.030
0.025
0.010
VGS = 10 V
TJ = 25
°
C
0.040
0.035
0.050
0.045
–50
–25
0
25
50
75
100
125
150
0.4
0.2
0.8
0.6
1.2
1.0
2.0
1.4
0
VGS = 10 V
ID = 20 A
1.6
1.8
0
10
20
30
40
60
70
80
100
10
100
1000
1.0
VGS = 0 V
50
90
8 V
9 V
7 V
6 V
5 V
VDS
≥
10 V
100
°
C
25
°
C
TJ = –55
°
C
25
°
C
–55
°
C
15 V
100
°
C
TJ = 125
°
C
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| MTP4N40E | TMOS POWER FET 4.0 AMPERES 400 VOLTS RDS(on) = 1.8 OHM |
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| MTP50N06 | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06EL | TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
| MTP50N06V | TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM |
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