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參數(shù)資料
| 型號： | MTP30P06V |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| 中文描述： | 30 A, 60 V, 0.08 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 191K |
| 代理商： | MTP30P06V |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
0
2
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
4
6
8
10
0
10
20
30
60
Figure 1. On–Region Characteristics
ID
0
1
2
3
4
8
0
10
20
30
60
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
10
20
30
40
50
0
0.02
0.04
0.06
0.12
R
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0
10
20
30
40
70
1
50
10
100
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
TJ = 125
°
C
100
°
C
TJ = 25
°
C
VDS
≥
10 V
TJ = –55
°
C
25
°
C
100
°
C
TJ = 100
°
C
25
°
C
–55
°
C
VGS = 0 V
VGS = 10V
VGS = 10 V
40
50
12
7 V
6 V
5 V
4 V
8 V
9 V
40
50
5
6
7
0.08
0.1
60
60
R
0
10
20
30
40
60
0.04
0.05
0.08
ID, DRAIN CURRENT (AMPS)
15 V
TJ = 25
°
C
VGS = 10 V
0.06
0.07
50
R
(
–50
0
0.2
0.4
0.6
1.8
TJ, JUNCTION TEMPERATURE (
°
C)
–25
0
25
50
75
100
150
VGS = 10 V
ID = 15 A
0.8
1
1.2
1.4
1.6
125
175
相關(guān)PDF資料 |
PDF描述 |
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| MTP30P06 | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTP36N06V | TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
| MTP36N06 | TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04 OHM |
| MTP3N100E | TMOS POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM |
| MTP3N120E | TMOS POWER FET 3.0 AMPERES 1200 VOLTS RDS(on) = 5.0 OHM |
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