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參數(shù)資料
| 型號(hào)： | MTP30N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM |
| 中文描述： | 30 A, 60 V, 0.05 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 207K |
| 代理商： | MTP30N06VL |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
0
1
2
3
0
10
60
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
1
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
3
5
10
0
0
20
50
60
ID
Figure 2. Transfer Characteristics
0
10
20
60
0.02
0.06
0.04
0.01
R
0
20
30
60
0
0.02
0.04
0.06
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
1.8
0
10
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
20
40
50
60
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
VGS = 5 V
ID = 15 A
TJ = 25
°
C
VGS = 10 V
8 V
6 V
5 V
3 V
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
25
°
C
TJ = 25
°
C
VGS = 5 V
10 V
VGS = 0 V
TJ = 125
°
C
30
50
4
30
30
10
30
VDS
≥
10 V
TJ = –55
°
C
100
°
C
4 V
2
4
6
40
0.08
0
1
1.4
1000
1
100
°
C
5
6
7
8
9
10
20
40
0.07
0.05
0.03
40
50
40
50
0.01
0.03
0.05
0.4
0.2
0
2
175
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| MTP30P06V | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
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