參數(shù)資料
型號(hào): MTP3055V
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM
中文描述: 12 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/8頁
文件大?。?/td> 160K
代理商: MTP3055V
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
0
1
2
3
4
5
0
8
16
24
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2
4
6
8
10
0
8
16
24
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
4
8
16
24
0
0.10
0.20
0.30
R
0
8
20
24
0.08
0.09
0.13
0.15
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
– 50
0.6
0.8
1.2
1.6
0
20
50
60
1
10
100
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
– 25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
10 V
TJ = – 55
°
C
25
°
C
100
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
9 V
VGS = 10 V
ID = 6 A
8 V
6 V
5 V
4 V
7 V
4
12
20
3
5
7
9
4
12
20
VGS = 10 V
TJ = 100
°
C
25
°
C
– 55
°
C
12
20
4
12
16
10
30
40
0.05
0.15
0.25
0.10
0.12
0.14
0.11
1.0
1.4
TJ = 125
°
C
VGS = 10 V
15 V
175
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