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參數(shù)資料
| 型號(hào)： | MTP2N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| 中文描述： | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 219K |
| 代理商： | MTP2N60E |
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Motorola TMOS Power MOSFET Transistor Device Data
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相關(guān)PDF資料 |
PDF描述 |
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| MTP2P50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM |
| MTP2P50 | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM |
| MTP3055 | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM |
| MTP3055 | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
| MTP3055E | N - CHANNEL 60V - 0.1ohm - 12A TO-220 STripFET MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP2P50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM |
| MTP2P50E | 功能描述:MOSFET 500V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP2P50E_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 2 Amps, 500 Volts |
| MTP2P50EG | 功能描述:MOSFET 500V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP2S-E10-C | 功能描述:電纜束帶 Multiple Tie Plate 2 Bund, M-S ties #10 RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長(zhǎng)度:19 mm 寬度:19 mm 抗拉強(qiáng)度: |
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