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參數(shù)資料
| 型號(hào)： | MTP2N60E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| 中文描述： | 2 A, 600 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 219K |
| 代理商： | MTP2N60E |
2
Motorola TMOS Power MOSFET Transistor Device Data
ELECTRICAL CHARACTERISTICS
(TJ = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
μ
Adc)
Temperature Coefficient (positive)
V(BR)DSS
600
—
—
480
—
—
Vdc
mV/
°
C
mA
Zero Gate Voltage Drain Current
(VDS = 600 Vdc, VGS = 0 Vdc)
°
(VDS = 480 Vdc, VGS = 0 Vdc, TJ = 125
°
C)
Gate–Body Leakage Current — Forward (VGSF = 20 Vdc, VDS = 0 Vdc)
Gate–Body Leakage Current — Reverse (VGSR = 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (1)
IDSS
—
—
—
—
0.25
1.0
IGSSF
IGSSR
—
—
100
nAdc
—
—
100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250
μ
Adc)
Temperature Coefficient (negative)
μ
Static Drain–to–Source On–Resistance (VGS = 10 Vdc, ID = 1.0 Adc)
Drain–to–Source On–Voltage
(VGS = 10 Vdc, ID = 2.0 Adc)
°
(VGS = 10 Vdc, ID = 1.0 Adc, TJ = 125
°
C)
Forward Transconductance (VDS
≥
50 Vdc, ID = 1.0 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Reverse Transfer Capacitance
VGS(th)
2.0
—
3.1
8.5
4.0
—
Vdc
mV/
°
C
Ohm
RDS(on)
VDS(on)
—
3.3
3.8
—
—
—
—
8.2
8.4
Vdc
gFS
1.0
—
—
mhos
f = 1.0 MHz)
Ciss
Crss
Coss
—
435
—
pF
(VDS = 25 Vdc, VGS = 0 Vdc,
—
56
—
Output Capacitance
—
9.2
—
SWITCHING CHARACTERISTICS
(2)
Turn–On Delay Time
VGS = 10 Vdc, Rg = 18
)
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
—
12
—
ns
Rise Time
(VDD = 300 Vdc, ID = 2.0 Adc,
—
21
—
Turn–Off Delay Time
—
30
—
Fall Time
—
24
—
Gate Charge
VGS = 10 Vdc)
—
13
22
nC
(VDS = 400 Vdc, ID = 2.0 Adc,
—
2.0
—
6.0
—
—
5.0
—
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage
(IS = 2.0 Adc, VGS = 0 Vdc, TJ = 125
°
C)
(IS = 2.0 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
μ
s)
VSD
—
1.0
1.6
Vdc
(IS = 2.0 Adc, VGS = 0 Vdc)
—
0.9
—
Reverse Recovery Time
trr
—
340
—
ns
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
″
(Measured from the drain 0.25
″
from package to center of die)
Internal Source Inductance
(Measured from the source pin 0.25
″
from package to source bond pad.)
(1) Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%.
(2) Switching characteristics are independent of operating junction temperature.
Ld
—
—
3.5
4.5
—
—
nH
Ls
—
7.5
—
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