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參數(shù)資料
| 型號： | MTP2955D |
| 廠商： | Motorola, Inc. |
| 英文描述： | TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM |
| 中文描述： | TMOS是功率場效應晶體管60伏12安培的RDS（on）\u003d 0.230歐姆 |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 116K |
| 代理商： | MTP2955D |
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Motorola TMOS Power MOSFET Transistor Device Data
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相關PDF資料 |
PDF描述 |
|---|---|
| MTP29N15E | TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM |
| MTP2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
| MTP2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
| MTP2N60 | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2N60E | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MTP2955E | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM |
| MTP2955V | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP2955V_L86Z | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTP29N15E | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 29 Amps, 150 Volts N-Channel TO-220 |
| MTP2H-E10-C | 功能描述:電纜束帶 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長度:19 mm 寬度:19 mm 抗拉強度: |
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