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參數(shù)資料
| 型號(hào)： | MTP29N15E |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM |
| 中文描述： | 29 A, 150 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | MTP29N15E |
1
Motorola, Inc. 1997
N–Channel Enhancement–Mode Silicon Gate
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
Avalanche Energy Specified
Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
VDGR
VGS
VGSM
150
Vdc
Drain–to–Gate Voltage (RGS = 1.0 M
)
Gate–to–Source Voltage — Continuous
Gate–to–Source Voltage
— Non–Repetitive (tp
≤
10 ms)
150
Vdc
±
20
±
40
Vdc
Vpk
Drain Current — Continuous
Drain Current
— Continuous @ 100
°
C
Drain Current
— Single Pulse (tp
≤
10
μ
s)
ID
ID
IDM
29
19
102
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
PD
125
1.0
Watts
W/
°
C
Operating and Storage Temperature Range
TJ, Tstg
EAS
–55 to 150
°
C
Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25
°
C
(VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 )
421
mJ
Thermal Resistance — Junction to Case
Thermal Resistance
— Junction to Ambient
R
θ
JC
R
θ
JA
1.0
62.5
°
C/W
Maximum Lead Temperature for Soldering Purposes, 1/8
″
from case for 10 seconds
TL
260
°
C
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Order this document
by MTP29N15E/D
SEMICONDUCTOR TECHNICAL DATA
TMOS POWER FET
29 AMPERES
150 VOLTS
RDS(on) = 0.07 OHM
D
S
G
N–Channel
CASE 221A–06,
TO–220AB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MTP2N40E | TMOS POWER FET 2.0 AMPERES 400 VOLTS RDS(on) = 3.5 OHM |
| MTP2N50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM |
| MTP2N60 | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2N60E | TMOS POWER FET 2.0 AMPERES 600 VOLTS RDS(on) = 3.8 OHMS |
| MTP2P50E | TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
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| MTP2H-E10-C39 | 功能描述:電纜束帶 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長(zhǎng)度:19 mm 寬度:19 mm 抗拉強(qiáng)度: |
| MTP2H-E6-C | 功能描述:電纜束帶 Mutiple Tie Plate, 2 Bundle, M-H Ties, # RoHS:否 制造商:Phoenix Contact 產(chǎn)品:Cable Tie Mounts 類型:Adhesive 顏色:Black 材料:Acrylonitrile Butadiene Styrene (ABS) 長(zhǎng)度:19 mm 寬度:19 mm 抗拉強(qiáng)度: |
| MTP2N20 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTP2N35 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel Power MOSFETs, 2.25A, 350-400V |
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