參數(shù)資料
型號: MTP1N50E
廠商: MOTOROLA INC
元件分類: JFETs
英文描述: TMOS POWER FET 1.0 AMPERES 500 VOLTS RDS(on) = 5.0 OHM
中文描述: 1 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
文件頁數(shù): 3/8頁
文件大?。?/td> 159K
代理商: MTP1N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
R
(
R
0
4
8
12
16
0
0.50
1.0
1.50
2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
2.0
3.0
4.0
5.0
6.5
0
0.75
1.25
1.75
2.0
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.4
0.8
1.2
1.6
2.0
0
2
8
10
0
0.50
1.0
1.50
2.0
3.0
4.0
5.5
6.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.5
1.0
2.0
2.5
0
100
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
200
300
400
500
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
–25
0
25
50
75
100
125
150
TJ = 25
°
C
VDS
10 V
TJ = 100
°
C
25
°
C
–55
°
C
25
°
C
TJ = 25
°
C
VGS = 0 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
VGS = 10 V
ID = 0.5 A
7 V
8 V
6 V
5 V
15 V
TJ = 125
°
C
100
°
C
25
°
C
1.50
0.50
1.0
0.25
0.75
1.25
1.75
6
1.5
3.5
4.5
5.0
6.0
3.5
4.5
5.5
6
10
14
0.25
0.75
1.25
1.75
2
0.25
2.5
4
TJ = 100
°
C
–55
°
C
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