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參數(shù)資料
| 型號： | MTP15N06VL |
| 廠商： | MOTOROLA INC |
| 元件分類： | JFETs |
| 英文描述： | TMOS POWER FET 15 AMPERES 60 VOLTS RDS(on) = 0.085 OHM |
| 中文描述： | 15 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 文件頁數(shù)： | 6/8頁 |
| 文件大小： | 216K |
| 代理商： | MTP15N06VL |
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
I
Figure 13. Thermal Response
r
T
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
0.1
100
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
10
VGS = 15 V
SINGLE PULSE
TC = 25
°
C
1
1
10
100
0.1
dc
100
μ
s
1 ms
10 ms
10
μ
s
R
θ
JC(t) = r(t) R
θ
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θ
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
t, TIME (s)
1.00
0.10
0.01
1.0E–05
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E–04
1.0E–03
1.0E–02
1.0E–01
1.0E+00
1.0E+01
0.02
TJ, STARTING JUNCTION TEMPERATURE (
°
C)
EA
A
25
50
75
100
125
ID = 15 A
150
0
100
90
70
60
50
40
30
20
10
80
175
110
120
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|---|---|
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| MTP1N100E | TMOS POWER FET 1.0 AMPERES 1000 VOLTS RDS(on) = 9.0 OHM |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTP15N08EL | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTP15N15 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR |
| MTP162M3 | 制造商:CYSTEKEC 制造商全稱:Cystech Electonics Corp. 功能描述:30V P-CHANNEL Enhancement Mode MOSFET |
| MTP16N25E | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTP187M006P1B | 制造商:Mallory Sonalert Products Inc 功能描述:Cap Tant Wet 180uF 6V 20% (3.68 X 15.24mm) Axial 3.4 Ohm 85°C |
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