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參數(shù)資料
| 型號： | MTD2955VT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 12 A, 60 V, 0.23 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MTD2955VT4 |
MTD2955V
http://onsemi.com
6
SAFE OPERATING AREA
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 13. Thermal Response
Figure 14. Diode Reverse Recovery Waveform
di/dt
t
rr
t
a
t
p
I
S
0.25 I
S
TIME
I
S
t
b
T
J
, STARTING JUNCTION TEMPERATURE (
°
C)
EA
0.1
10
100
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
A
I
25
50
75
100
125
V
GS
= 15 V
SINGLE PULSE
T
C
= 25
°
C
I
D
= 12 A
1.0
150
1.0
100
0.1
0
75
25
10
dc
100 s
1 ms
10 ms
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
50
175
100
125
150
175
200
225
t, TIME (s)
r
T
R
JC
(t) = r(t) R
JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
T
C
= P
(pk)
R
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
1.0
0.1
0.01
1.0E05
0.2
D = 0.5
0.05
0.01
SINGLE PULSE
0.1
1.0E04
1.0E03
1.0E02
1.0E01
1.0E+00
1.0E+01
0.02
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD2955VT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 12A, 60V P-Channel DPAK |
| MTD2N20 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE |
| MTD2N40E | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 400V 2A 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD2N40ET4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| MTD2N50 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
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